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MDD 312
I t
[A s]
I FSM
[A]
10000
8000
6000
4000
50 Hz
80 % V RRM
T VJ = 45°C
T VJ = 150°C
10 6
2
2
V R = 0 V
T VJ = 45°C
T VJ = 150°C
500
400
I FAVM
300
[A]
200
DC
180° sin
120°
60°
30°
2000
100
0
0.001
0.01
0.1
1
10 5
1
10
0
0
25
50
75
100 125 150
Fig. 2 I t versus time (1-10 ms)
t [s]
Fig. 1 Surge overload current
I FSM : Crest value, t: duration
2
t [ms]
T C [°C]
Fig. 3 Maximum forward current
at case temperature
P tot
[W]
600
500
400
300
200
DC
180° sin
120°
60°
R thKA K/W
0.06
0.1
0.2
0.3
0.4
0.6
0.8
I RM
[A]
600
500
400
300
200
T VJ = 125°C
V R = 600 V
IF = 400 A
30°
100
100
0
0
100
200
300
400
500
0
25
50
75
100
125
150
0
0
50
100
150
200
I FAVM [A]
T A [°C]
di F /dt [A/μs]
1750
Fig. 4 Power dissipation vs. forward current & ambient temperature (per diode)
25
Fig. 5 Typ. peak reverse current
P tot
[W]
1500
1250
1000
750
R
Circuit
L
R thKA K/W
0.04
0.06
0.08
0.12
0.2
0.3
0.5
20
t rr 15
[μs]
10
T VJ = 125°C
V R = 600 V
IF = 400 A
500
250
B2U
2 x MDD312
5
0
0
100 200 300 400 500 600
0
25
50
75
100
125
150
0
0
50
100
150
200
I dAVM [A]
T A [°C]
di F /dt [A/μs]
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature R = resistive load, L = inductive load
IXYS reserves the right to change limits, test conditions and dimensions.
? 2013 IXYS All rights reserved
Fig. 7 Typ. recovery time t rr
versus -di F /dt
20130813g
3-4
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